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ISL6612B, ISL6613B
Data Sheet
July 25, 2005
FN9205.1
Advanced Synchronous Rectified Buck
MOSFET Drivers with Pre-POR OVP
The ISL6612B and ISL6613B are high frequency MOSFET
drivers specifically designed to drive upper and lower power
N-Channel MOSFETs in a synchronous rectified buck
converter topology. These drivers combined with HIP63xx or
ISL65xx Multi-Phase Buck PWM controllers and N-Channel
MOSFETs form complete core-voltage regulator solutions for
advanced microprocessors.
The ISL6612B drives the upper gate to above rising VCC
POR (7V), while the lower gate can be independently driven
over a range from 5V to 12V. The ISL6613B drives both
upper and lower gates over a range of 5V to 12V. This drive-
voltage provides the flexibility necessary to optimize
applications involving trade-offs between gate charge and
conduction losses. These drivers are optimized for POL
DC/DC Converters for IBA Systems.
An advanced adaptive zero shoot-through protection is
integrated to prevent both the upper and lower MOSFETs
from conducting simultaneously and to minimize the dead
time. These products add an overvoltage protection feature
operational before VCC exceeds its turn-on threshold, at
which the PHASE node is connected to the gate of the low
side MOSFET (LGATE). The output voltage of the converter
is then limited by the threshold of the low side MOSFET,
which provides some protection to the microprocessor if the
upper MOSFET(s) is shorted during initial start-up.
These drivers also feature a three-state PWM input which,
working together with Intersil鈥檚 multi-phase PWM controllers,
prevents a negative transient on the output voltage when the
output is shut down. This feature eliminates the Schottky
diode that is used in some systems for protecting the load
from reversed output voltage events.
Features
鈥?Pin-to-pin Compatible with HIP6601 SOIC family
鈥?Dual MOSFET Drives for Synchronous Rectified Bridge
鈥?Low VCC Rising Threshold (7V) for IBA Applications.
鈥?Advanced Adaptive Zero Shoot-Through Protection
- Body Diode Detection
- Auto-zero of r
DS(ON)
Conduction Offset Effect
鈥?Adjustable Gate Voltage (5V to 12V) for Optimal Efficiency
鈥?36V Internal Bootstrap Schottky Diode
鈥?Bootstrap Capacitor Overcharging Prevention
鈥?Supports High Switching Frequency (up to 2MHz)
- 3A Sinking Current Capability
- Fast Rise/Fall Times and Low Propagation Delays
鈥?Three-State PWM Input for Output Stage Shutdown
鈥?Three-State PWM Input Hysteresis for Applications With
Power Sequencing Requirement
鈥?Pre-POR Overvoltage Protection
鈥?VCC Undervoltage Protection
鈥?Expandable Bottom Copper Pad for Enhanced Heat
Sinking
鈥?Dual Flat No-Lead (DFN) Package
- Near Chip-Scale Package Footprint; Improves PCB
Efficiency and Thinner in Profile
鈥?Pb-Free Plus Anneal Available (RoHS Compliant)
Applications
鈥?Optimized for POL DC/DC Converters for IBA Systems
鈥?Core Regulators for Intel
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and AMD
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Microprocessors
鈥?High Current DC/DC Converters
鈥?High Frequency and High Efficiency VRM and VRD
Related Literature
鈥?Technical Brief TB363 鈥淕uidelines for Handling and
Processing Moisture Sensitive Surface Mount Devices
(SMDs)鈥?/div>
鈥?Technical Briefs TB400 and TB417 for Power Train
Design, Layout Guidelines, and Feedback Compensation
Design
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CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-352-6832
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Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright Intersil Americas Inc. 2005. All Rights Reserved
All other trademarks mentioned are the property of their respective owners.
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