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CY7C109B-12ZXC Datasheet

  • CY7C109B-12ZXC

  • 128K x 8 Static RAM

  • 852.00KB

  • 12页

  • CYPRESS

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CY7C109B
CY7C1009B
128K x 8 Static RAM
Features
鈥?High speed
鈥?t
AA
= 12 ns
鈥?Low active power
鈥?495 mW (max.)
鈥?Low CMOS standby power
鈥?11 mW (max.) (L Version)
鈥?2.0V Data Retention
鈥?Automatic power-down when deselected
鈥?TTL-compatible inputs and outputs
鈥?Easy memory expansion with CE
1
, CE
2
, and OE options
鈥?CY7C109B is available in standard 400-mil-wide SOJ
and 32-pin TSOP type I packages. The CY7C1009B is
available in a 300-mil-wide SOJ package
Functional Description
[1]
The CY7C109B/CY7C1009B is a high-performance CMOS
static RAM organized as 131,072 words by 8 bits. Easy
memory expansion is provided by an active LOW Chip Enable
(CE
1
), an active HIGH Chip Enable (CE
2
), an active LOW
Output Enable (OE), and tri-state drivers. Writing to the device
is accomplished by taking Chip Enable One (CE
1
) and Write
Enable (WE) inputs LOW and Chip Enable Two (CE
2
) input
HIGH. Data on the eight I/O pins (I/O
0
through I/O
7
) is then
written into the location specified on the address pins (A
0
through A
16
).
Reading from the device is accomplished by taking Chip
Enable One (CE
1
) and Output Enable (OE) LOW while forcing
Write Enable (WE) and Chip Enable Two (CE
2
) HIGH. Under
these conditions, the contents of the memory location
specified by the address pins will appear on the I/O pins.
The eight input/output pins (I/O
0
through I/O
7
) are placed in a
high-impedance state when the device is deselected (CE
1
HIGH or CE
2
LOW), the outputs are disabled (OE HIGH), or
during a write operation (CE
1
LOW, CE
2
HIGH, and WE LOW).
CY7C109B is available in standard 400-mil-wide SOJ and 32-
pin TSOP type I packages. The CY7C1009B is available in a
300-mil-wide SOJ package. The CY7C109B and CY7C1009B
are functionally equivalent in all other respects
Logic Block Diagram
Pin Configurations
[2]
SOJ
Top View
NC
A
16
A
14
A
12
A7
A6
A5
I/O
0
INPUT BUFFER
A4
A3
A2
A1
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
I/O
1
ROW DECODER
I/O
2
SENSE AMPS
128K x 8
ARRAY
I/O
0
I/O
1
I/O
2
GND
A
11
A
9
A
8
A
13
WE
CE
2
A
15
V
CC
NC
A
16
A
14
A
12
A
7
A
6
A
5
A
4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
A0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
V
CC
A
15
CE
2
WE
A
13
A
8
A
9
A
11
OE
A
10
CE
1
I/O
7
I/O
6
I/O
5
I/O
4
I/O
3
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE
A
10
CE
I/O
7
I/O
6
I/O
5
I/O
4
I/O
3
GND
I/O
2
I/O
1
I/O
0
A
0
A
1
A
2
A
3
I/O
3
I/O
4
I/O
5
CE
1
CE
2
WE
OE
COLUMN
DECODER
POWER
DOWN
I/O
6
I/O
7
TSOP I
Top View
(not to scale)
Note:
1. For guidelines on SRAM system design, please refer to the 鈥楽ystem Design Guidelines鈥?Cypress application note, available on the internet at www.cypress.com.
2. NC pins are not connected on the die.
A
9
A
10
A
11
A
12
A
13
A
14
A
15
A
16
Cypress Semiconductor Corporation
Document #: 38-05038 Rev. *C
鈥?/div>
198 Champion Court
鈥?/div>
San Jose
,
CA 95134-1709
鈥?/div>
408-943-2600
Revised August 3, 2006
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CY7C109B-12ZXC PDF文件相关型号

CY7C109B-15ZXC,CY7C109B-20ZXC

CY7C109B-12ZXC 产品属性

  • 23

  • 集成电路 (IC)

  • 存储器

  • -

  • RAM

  • SRAM - 异步

  • 1M (128K x 8)

  • 12ns

  • 并联

  • 4.5 V ~ 5.5 V

  • 0°C ~ 70°C

  • 32-TFSOP(0.724",18.40mm 宽)

  • 32-TSOP I

  • 管件

CY7C109B-12ZXC相关型号PDF文件下载

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  • 英文版
    16K x 8/9 Dual-Port Static RAM with Sem, Int, Busy
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  • 英文版
    32K x 8/9 Dual-Port Static RAM
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  • 英文版
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  • 英文版
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  • 英文版
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  • 英文版
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    CYPRESS [C...
  • 英文版
    4K x 16/18 and 8K x 16/18 Dual-Port Static RAM with Sem, Int...
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  • 英文版
    16K x 16/18 Dual-Port Static RAM
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  • 英文版
    32K/64K x 16/18 Dual-Port Static RAM
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  • 英文版
    32K/64K x 16/18 Dual-Port Static RAM
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  • 英文版
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